Reactive Ion Etching of GaN and AlxGa1-xN Using Cl2/CH4/Ar Plasma
- 1 April 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (4S)
- https://doi.org/10.1143/jjap.38.2646
Abstract
Reactive ion etching (RIE) of p-GaN and p-Al x Ga1-x N has been investigated using Cl2/CH4/Ar plasmas in the conventional RIE technique. It has been found that variation of CH4 percentage in gas mixtures leads to changes in the etch rate of both p-GaN and p-Al0.15Ga0.85N. The maximum etch rate for p-GaN has been found to be 257 nm/min in Cl2/Ar plasma containing 2.5% CH4 and the value is 170 nm/min for p-Al0.15Ga0.85N in Cl2/Ar plasma containing 10% CH4. With increasing rf power, the etch rates for p-GaN and p-Al0.15Ga0.85N reach as high as 433 nm/min and 255 nm/min respectively. Under optimum conditions of gas composition, radiofrequency (rf) power, and temperature, an anisotropic and smooth etch profile is obtained. The etched surface exhibits small roughness.Keywords
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