Reactive Ion Beam Etching of GaAs in CCl4
- 1 March 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (3A) , L170-172
- https://doi.org/10.1143/jjap.21.l170
Abstract
Dry etching of GaAs using reactive ion beams (RIBE) derived from CCl4 is reported. Etch rates as high as 7800 Å/min-mA/cm2, ∼2.5× greater than with Ar+ sputtering, were obtained for 750-eV reactive ion energy. Etch profiles resulting from RIBE with CCl4 or inert Ar+-milling exhibited similar “overcutting,” i.e., sidewalls sloped away from the photoresist mask at ∼16° to the incident beam. Wall angle was independent of ion source-to-sample separation (15–22 cm) and substrate orientation ( or -oriented GaAs), but was affected by tilting the substrate with respect to the incident ion beam.Keywords
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