Lifetime of an Electron-Hole Plasma of Silicon in the Picosecond Range
- 18 February 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 54 (7) , 722-724
- https://doi.org/10.1103/physrevlett.54.722
Abstract
A new recombination channel for the electron-hole plasma in silicon, at carrier densities of , is calculated. It is shown to be important in explaining the optical response of the electron-hole plasma at different probing wavelengths generated by picosecond pulses at very large fluences sufficient to melt the sample.
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