Optical gain in CdIn2S4
- 15 August 1987
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (4) , 1349-1351
- https://doi.org/10.1063/1.339637
Abstract
Photoluminescence measurements in the donor‐acceptor band of single crystals of CdIn2S4 have displayed optical gain under high extrinsic excitation intensities of the order of 108 W/m2. Gain spectra centered around λ=765 mm have been observed yielding a maximum gain of 2.2 cm−1 at 300 K and about twice that value at 100 K. The results are correlated with kinetics measurements under varying incident intensity, showing a sharp break in the luminescence decay time at exciting intensities corresponding to the onset of gain.This publication has 13 references indexed in Scilit:
- Saturation photoconductivity inPhysical Review B, 1985
- Structural stability in the spinel compound CdIn2S4Il Nuovo Cimento D, 1983
- Luminescence decay in CdIn2S4 single crystalsIl Nuovo Cimento D, 1983
- Photoconductivity and photosensitivity of a CdIn2S4 monocrystalIl Nuovo Cimento D, 1983
- Science University of Tokyo negative resistance in CdIn2S4 single crystalsPhysica Status Solidi (a), 1982
- Low-Frequency Photocurrent Oscillations in CdIn2S4 Single CrystalsJapanese Journal of Applied Physics, 1980
- Photoluminescence of CdIn2S4 single crystals recombination process and localized levelsPhysica Status Solidi (a), 1980
- Fundamental Absorption Edge in CdIn2S4Japanese Journal of Applied Physics, 1980
- Photoluminescence and resonant Raman scattering in CdIn2S4 and ZnIn2S4Physica Status Solidi (a), 1978
- Transport properties of CdIn2S4 single crystalsJournal of Physics and Chemistry of Solids, 1976