Saturation photoconductivity in
- 15 February 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (4) , 2326-2329
- https://doi.org/10.1103/physrevb.31.2326
Abstract
At excitation energies corresponding to definite extrinsic transitions in , the photoconductivity is investigated as a function of light intensity over a maximum of 12 orders of magnitude to photons/ sec). For certain wavelength ranges a photoconductivity plateau is observed at high excitation intensities. This saturation effect is attributed to a saturation of high density levels within the gap at high light intensities.
Keywords
This publication has 20 references indexed in Scilit:
- Photoluminescence and Photoconduction in the System (CdIn2S4)1-x-(In2S3)xJapanese Journal of Applied Physics, 1981
- Photoluminescence of CdIn2S4 single crystalsPhysica Status Solidi (a), 1980
- Photoluminescence of CdIn2S4 single crystals recombination process and localized levelsPhysica Status Solidi (a), 1980
- Fundamental Absorption Edge in CdIn2S4Japanese Journal of Applied Physics, 1980
- Photoconductivity and trap distribution in CdIn2S4Physica Status Solidi (a), 1978
- Trap distribution in ZnIn2S4from photoconductivity analysisJournal of Physics D: Applied Physics, 1976
- Recombination centres and traps in ZnIn2S4Journal of Luminescence, 1975
- Low temperature photoconductivity of ZnIn2Se4 and CdIn2Se4Solid State Communications, 1974
- Trap distribution and photoconductivity in ZnIn2Se4 and ZnIn2Te4Il Nuovo Cimento B (1971-1996), 1974
- Optical properties of a ‘quasi-disordered’ semiconductor: ZnIn2S4Solid State Communications, 1973