A simulation model for electromigration in fine-line metallization of integrated circuits due to repetitive pulsed currents
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (12) , 2170-2179
- https://doi.org/10.1109/16.8791
Abstract
No abstract availableThis publication has 38 references indexed in Scilit:
- Effect of a contact and protective seal on aluminum electromigrationThin Solid Films, 1986
- Electromigration threshold in aluminum filmsSolid-State Electronics, 1985
- Mechanical Properties of Thin Films on SubstratesPublished by Elsevier ,1982
- The threshold current density and incubation time to electromigration in gold filmsThin Solid Films, 1977
- Electromigration in aluminium thin films under pulsed-current conditionsProceedings of the Institution of Electrical Engineers, 1976
- Electromigration and metalization lifetimesJournal of Applied Physics, 1973
- Time-dependent void nucleation during electromigrationMaterials Science and Engineering, 1971
- Thermal Cycling and Surface Reconstruction in Aluminum Thin FilmsJournal of the Electrochemical Society, 1969
- Current-induced mass transport in aluminumJournal of Physics and Chemistry of Solids, 1964
- Current-induced marker motion in gold wiresJournal of Physics and Chemistry of Solids, 1961