Low-temperature single-crystal Si TFTs fabricated on Si films processed via sequential lateral solidification
- 1 August 1998
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 19 (8) , 306-308
- https://doi.org/10.1109/55.704408
Abstract
Nonhydrogenated, n-channel, low-temperature-processed, single-crystal Si thin-film transistors (TFTs) have been fabricated on Si thin films prepared via sequential lateral solidification (SLS). The device characteristics of the resulting SLS TFTs exhibit properties and a level of performance that are superior to polycrystalline Si-based TFTs and are comparable to similar devices fabricated on silicon-on-insulator (SOI) substrates or bulk-Si wafers. We attribute these high-performance device characteristics to the absence of high-angle grain-boundaries within the active channel portion of the TFTs.Keywords
This publication has 12 references indexed in Scilit:
- Influence of melt depth in laser crystallized poly-Si thin film transistorsJournal of Applied Physics, 1997
- Single-crystal Si films for thin-film transistor devicesApplied Physics Letters, 1997
- Excimer laser crystallization and doping of silicon films on plastic substratesApplied Physics Letters, 1997
- Sequential lateral solidification of thin silicon films on SiO2Applied Physics Letters, 1996
- Crystalline Si Films for Integrated Active-Matrix Liquid-Crystal DisplaysMRS Bulletin, 1996
- High performance poly-Si TFTs fabricated using pulsed laser annealing and remote plasma CVD with low temperature processingIEEE Transactions on Electron Devices, 1995
- On the super lateral growth phenomenon observed in excimer laser-induced crystallization of thin Si filmsApplied Physics Letters, 1994
- Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon filmsApplied Physics Letters, 1993
- Multiple Pulse Irradiation Effects in Excimer Laser-Induced Crystallization of Amorphous Si FilmsMRS Proceedings, 1993
- Fabrication of submicrometer MOSFET's using gas immersion laser doping (GILD)IEEE Electron Device Letters, 1986