On the super lateral growth phenomenon observed in excimer laser-induced crystallization of thin Si films

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Abstract
This letter reports on the experimental findings, and provides a theoretical description of the super lateral growth (SLG) phenomenon observed in the pulsed laser‐induced solidification of amorphous thin Si films on SiO2. Experimentally, we report and elaborate on the isolated single‐crystal disk structure that is observed at the upper threshold of the SLG regime; the structure is revealed as an important microstructural feature for understanding the phenomenon. A theoretical discussion of the SLG phenomenon is provided in terms of the key factors that are suggested by our model—the interface response function of the solid, the nucleation kinetics of the solid, and a highly transient lateral‐thermal profile near the solid‐melt interface. Our model and analysis point out the important inadequacies associated with the vertical solidification rate/temperature gradient model, which is currently being utilized to explain the excimer laser crystallization of thin Si films on SiO2.