RF loss and crosstalk on extremely high resistivity (10 k-1 MΩ-cm) Si fabricated by ion implantation
- 7 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 221-224
- https://doi.org/10.1109/mwsym.2000.860951
Abstract
[[abstract]]We have achieved 1.6MΩ-cm resistivity using ion implantation that has little negative effect on MOS devices. Extremely low loss and cross coupling of 6.3 and -79 dB/cm (10µm gap) at 20GHz are measured with 1µm Al, respectively, which is due to implant induced trap with approx. 1ps carrier lifetime and stable to 400°C.[[fileno]]2060114030003[[department]]工程與系統科學This publication has 6 references indexed in Scilit:
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