Structural and Chemical State Analysis of the Heat-Treated Au/GaSb(110) Interface by Means of Angle-Resolved X-Ray Photoelectron Spectroscopy (ARXPS)

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Abstract
Angle-resolved X-ray photoelectron spectroscopic (ARXPS) studies were carried out to characterize the Au/GaSb (110) interface. Immediately after the evaporation of gold on the GaSb (110) surface to a thickness of about 85Å, angular distribution curves (ABC's) of photoelectron intensities showed no fine structures. After heat treatment at 540°C for 30 minutes, ADC's for Ga3d, Sb4d and Au4f showed explicit fine structures. Furthermore, the ADC for Au4f was quite similar to that for Ga3d. This seems to indicate that the Au atoms were incorporated into the gallium antimonide lattice and were preferentially substituted for Ga atoms.