Laser molecular beam epitaxy of single-crystal SrVO3− films
- 1 February 1992
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 208 (2) , 264-268
- https://doi.org/10.1016/0040-6090(92)90654-t
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Heteroepitaxial Growth of CeO2(001) Films on Si(001) Substrates by Pulsed Laser Deposition in Ultrahigh VacuumJapanese Journal of Applied Physics, 1991
- Ceramic layer epitaxy by pulsed laser deposition in an ultrahigh vacuum systemApplied Physics Letters, 1991
- Diffusion of vanadium in siliconApplied Physics Letters, 1991
- Anomalies in the Electrical Resistivity of Tl-Sr-V-O System: Search for SuperconductivityJapanese Journal of Applied Physics, 1991
- Layered perovskite compounds (n=1, 2, 3, and ∞)Physical Review B, 1991
- Existence of Superconducting States Above 30 K in Sr-V-O Systems Doped with Various ElementsJapanese Journal of Applied Physics, 1990
- In Situ RHEED Observation of CeO2 Film Growth on Si by Laser Ablation Deposition in Ultrahigh-VacuumJapanese Journal of Applied Physics, 1990
- Etude des proprietes magnetiques, electriques et optiques des phases de structure perovskite SrVO2.90 et SrVO3Journal of Solid State Chemistry, 1975
- Tri-arc furnace for Czochralski growth with a cold crucibleJournal of Crystal Growth, 1968