Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems
- 25 December 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (26)
- https://doi.org/10.1063/1.2410228
Abstract
A grating-bicoupled plasmon-resonant terahertz emitter was fabricated using InGaP/InGaAs/GaAs heterostructure material systems. The device structure is based on a high-electron mobility transistor and incorporates doubly interdigitated grating gates that periodically localize the two-dimensional (2D) plasmon in 100 nm regions with a submicron interval. Photoexcited electrons, injected to the 2D plasmon cavities, extensively promoted the plasmon instability, resulting in observation of emission of terahertz electromagnetic radiation at room temperature. ©2006 American Institute of PhysicKeywords
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