Study of Ge x Si1?x /Si superlattices by ellipsometry
- 1 September 1992
- journal article
- surfaces and-multilayers
- Published by Springer Nature in Applied Physics A
- Vol. 55 (3) , 297-300
- https://doi.org/10.1007/bf00348400
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistorsIEEE Electron Device Letters, 1990
- Ellipsometric and reflectance studies of GaAs/AlAs superlatticesApplied Physics A, 1989
- Application of spectroscopic ellipsometry to complex samplesApplied Physics Letters, 1988
- GexSi1−x strained-layer superlattice waveguide photodetectors operating near 1.3 μmApplied Physics Letters, 1986
- Determination of the composition of GeSi alloy by ellipsometryPhysica Status Solidi (a), 1979