A Method of Measuring Lifetime for Minority Carriers Induced by an Electron Beam in Germanium
- 1 March 1966
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 5 (3)
- https://doi.org/10.1143/jjap.5.249
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Measurement of Short Carrier LifetimesReview of Scientific Instruments, 1956
- dc Photoconductivity Technique for the Determination of Lifetime of Minority Carriers in Silicon FilamentsReview of Scientific Instruments, 1955
- Measurement of Carrier Lifetimes in Germanium and SiliconJournal of Applied Physics, 1955
- Drift Mobilities in Semiconductors. I. GermaniumPhysical Review B, 1953