Visible Y-junction diode laser with mixed coupling
- 15 July 1990
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (2) , 868-870
- https://doi.org/10.1063/1.346772
Abstract
An experimental study and theoretical analysis of a phase‐locked, visible, λ=670 nm, 2‐3 Y‐junction semiconductor laser array are presented. In a ridgetype 2‐3 Y‐junction, AlInGaP/InGaP array, both in‐phase and anti‐phase array modes are observed to lase simultaneously. The experimental results are discussed in the framework of a model based on the beam propagation method. The influence of the presence of both interferometric and evanescent coupling on the array modes is analyzed.This publication has 8 references indexed in Scilit:
- Array modes of longitudinally varying laser array geometriesIEEE Journal of Quantum Electronics, 1989
- High-power, diffraction-limited-beam operation from interferometric, phase-locked arrays of AlGaAs/GaAs diode lasersJournal of Applied Physics, 1989
- High-power AlGaInP three-ridge type laser diode arrayElectronics Letters, 1988
- Y-Junction semiconductor laser arrays: Part I--TheoryIEEE Journal of Quantum Electronics, 1987
- Phased-Array with the “YY" Shaped Symmetrically Branching Waveguide (SBW)Japanese Journal of Applied Physics, 1986
- 0° phase mode operation in phased-array laser diode with symmetrically branching waveguideApplied Physics Letters, 1985
- Coupled-mode analysis of phase-locked injection laser arraysApplied Physics Letters, 1984
- High power coupled multiple stripe quantum well injection lasersApplied Physics Letters, 1982