The Influence of Tiw Barrier Layer on Reliability of AlCu and AlSiCu Interconnects
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Stress-Induced Void Formation in Metal LinesMRS Bulletin, 1993
- Correlation between stress voiding of Al(Si)(Cu) metallizations and crystal orientation of aluminum grainsJournal of Applied Physics, 1993
- New Failure Mechanisms in Sputtered Aluminum-Silicon Films8th Reliability Physics Symposium, 1984
- Reliability Implications of Nitrogen Contamination During Deposition of Sputtered Aluminum/Silicon Metal Films8th Reliability Physics Symposium, 1984