Extremely low threshold current operation of 638 nm GaInP/AlGaInP strained MQW lasers
- 1 January 1992
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 867-870
- https://doi.org/10.1109/iedm.1992.307494
Abstract
Transverse-mode stabilized GaInP/AlGaInP strained multiquantum well lasers emitting at 638 nm were grown on a 15 degrees offThis publication has 5 references indexed in Scilit:
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