Gallium arsenide surface states
- 31 October 1964
- journal article
- other
- Published by Elsevier in Surface Science
- Vol. 1 (4) , 407-410
- https://doi.org/10.1016/0039-6028(64)90008-1
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- INVESTIGATION OF SURFACE STATES ON SEMICONDUCTORS BY THE PULSED FIELD EFFECTAnnals of the New York Academy of Sciences, 1963
- Temperature Dependence of Photo-Hall Effects in High-Resistivity Gallium Arsenide. II. Two-Carrier EffectsPhysical Review B, 1962
- Temperature Dependence of Photo-Hall Effects in High-Resistivity Gallium Arsenide. I. One-Carrier EffectsPhysical Review B, 1962
- Cross sections of midgap surface states in silicon by pulsed field effect experimentJournal of Physics and Chemistry of Solids, 1960