High-power submicron InP D-HBT push-push oscillators operating up to 215 GHz
- 1 January 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 15508781,p. 4 pp.
- https://doi.org/10.1109/csics.2005.1531814
Abstract
High-performance and compact push-push oscillators operating up to 215 GHz were realized in a 0.5 /spl mu/m emitter double-heterojunction InGaAs/InP HBT (D-HBT) technology with maximum oscillation frequency f/sub max/ of 220 GHz and Vbceo>5V. Two different push-push topologies, each based on a differential Collpitt oscillators topology, were investigated. Taking the push-push output from the virtual ground at the base-resonator resulted in -8 dBm output power at 184 GHz while about -15...-10 dBm was obtained at 215 GHz by reducing the electrical length of the base resonator. A high-power second harmonic signal of more then 0 dBm was obtained at 184 GHz by directly combining the differential output signal at the collector nodes of the Colpitts oscillator. These oscillators are to our knowledge the highest frequency three-terminal device based sources reported in literature.Keywords
This publication has 9 references indexed in Scilit:
- InP double-hetero bipolar transistor technology for 130 GHz clock speedphysica status solidi (c), 2006
- A monolithic integrated 150 GHz SiGe HBT push-push VCO with simultaneous differential V-band outputPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Hybrid millimeter-wave push-push oscillators using silicon-germanium HBTsIEEE Transactions on Microwave Theory and Techniques, 2003
- Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technologyIEEE Journal of Solid-State Circuits, 2003
- Push-push oscillators for 94 and 140 GHz applications using standard pseudomorphic GaAs HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceiversIEEE Journal of Solid-State Circuits, 2002
- Compact InP-based HBT VCOs with a wide tuning range at W- and D-bandIEEE Transactions on Microwave Theory and Techniques, 2000
- A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidthIEEE Journal of Solid-State Circuits, 1999
- 155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillatorsIEEE Transactions on Microwave Theory and Techniques, 1995