Ultrathin nitrided gate dielectrics by plasma-assisted processing
- 1 September 1999
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 48 (1-4) , 67-70
- https://doi.org/10.1016/s0167-9317(99)00340-8
Abstract
No abstract availableKeywords
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- Surface nitridation of silicon dioxide with a high density nitrogen plasmaJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- Properties of Si[sub x]O[sub y]N[sub z] Films on SiJournal of the Electrochemical Society, 1968