The mechanism of formation of microdefects in silicon
- 2 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (2) , 596-612
- https://doi.org/10.1016/0022-0248(84)90467-6
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Microdefects in a non-striated distribution in floating-zone silicon crystalsJournal of Crystal Growth, 1981
- Etch structure on microdefects in floating-zone silicon wafers as affected by dopants and surface treatmentJournal of Applied Physics, 1980
- The formation of swirl defects in silicon by agglomeration of self-interstitialsJournal of Crystal Growth, 1977
- The formation of interstitial swirl defects in dislocation-free floating-zone silicon crystalsJournal of Crystal Growth, 1976
- Formation and nature of swirl defects in siliconApplied Physics A, 1975
- Characterization of swirl defects in floating-zone silicon crystalsJournal of Crystal Growth, 1975
- The nature of swirls and its significance for understanding point defects in siliconPhysica Status Solidi (a), 1975
- Effect of growth parameters on formation and elimination of vacancy clusters in dislocation-free silicon crystalsJournal of Crystal Growth, 1974
- VACANCY CLUSTERS IN DISLOCATION-FREE SILICONApplied Physics Letters, 1970
- 無転位シリコン単結晶中の点状欠陥Denki Kagaku oyobi Kogyo Butsuri Kagaku, 1967