Etch structure on microdefects in floating-zone silicon wafers as affected by dopants and surface treatment
- 1 April 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (4) , 2274-2276
- https://doi.org/10.1063/1.327858
Abstract
The microdefect distribution in dislocation‐free floating‐zone silicon crystals has been investigated by means of preferential etching. The etch structures developed on the microdefects are found to depend upon the presence of dopants and the surface treatment of the crystal sections. Strong indications were obtained that microdefects in chemically–mechanically polished slices are saturated with atomic hydrogen, developed during the polishing treatment, and which affects the etching behavior of the microdefects in a different way than hydrogen that dissolved in the crystal during the growth process. Low concentrations of dopants appeared to suppress the effect of hydrogen introduced during polishing.This publication has 8 references indexed in Scilit:
- The formation of swirl defects in silicon by agglomeration of self-interstitialsJournal of Crystal Growth, 1977
- A New Preferential Etch for Defects in Silicon CrystalsJournal of the Electrochemical Society, 1977
- Effect of low cooling rates on swirls and striations in dislocation-free silicon crystalsJournal of Crystal Growth, 1976
- The formation of interstitial swirl defects in dislocation-free floating-zone silicon crystalsJournal of Crystal Growth, 1976
- Effect of growth parameters on formation and elimination of vacancy clusters in dislocation-free silicon crystalsJournal of Crystal Growth, 1974
- A Water-Amine-Complexing Agent System for Etching SiliconJournal of the Electrochemical Society, 1967
- Growth of Silicon Crystals Free from DislocationsJournal of Applied Physics, 1959
- On the permeation of hydrogen and helium in single crystal silicon and germanium at elevated temperaturesPhysica, 1956