Drain resistance degradation under high fields in AlInAs/GaInAs MODFETs

This publication has 8 references indexed in Scilit:

• Degradation mechanism of the AlInAs/GaInAs high electron mobility transistor due to fluorine incorporation
  Applied Physics Letters, 1996
• Evidence of interface trap creation by hot-electrons in AlGaAs/GaAs high electron mobility transistors
  Applied Physics Letters, 1996
• Novel high-yield trilayer resist process for 0.1 μm T-gate fabrication
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
• Off-state breakdown in InAlAs/InGaAs MODFET's
  IEEE Transactions on Electron Devices, 1995
• Impact ionization in InAlAs/InGaAs HFET's
  IEEE Electron Device Letters, 1994
• Failures of ALGaAs/GaAs HEMTs induced by hot electrons
  Quality and Reliability Engineering International, 1993
• Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFET
  Microelectronic Engineering, 1992
• 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors
  IEEE Transactions on Electron Devices, 1992