Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFET
- 1 September 1992
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 19 (1-4) , 401-404
- https://doi.org/10.1016/0167-9317(92)90462-z
Abstract
No abstract availableKeywords
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- Control of gate leakage in InAlAs/InGaAs HEMTsElectronics Letters, 1991
- InGaAs/InP-Photodiodes with dark current limited by generation-recombinationElectronics Letters, 1991
- Excess gate-leakage current of InGaAs junction field-effect transistorsJournal of Applied Physics, 1988