The temperature dependence of breakdown voltage and on-resistance of LDMOS's
- 1 April 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (4) , 933-935
- https://doi.org/10.1109/t-ed.1987.23019
Abstract
The temperature dependence of the breakdown voltage VBDand on-resistance RONof LDMOS devices is studied. The analysis is based on incorporating the temperature-dependent characteristics of the basic physical parameters into existing models to calculate VBDand RON. The effects of temperature on mobility, bandgap, intrinsic concentration, Fermi level, and resistivity of the material are taken into account. Avalanche breakdown is assumed and the partial ionization, at room temperature, of impurity atoms is considered. The contribution of the depletion mode device to RONis assumed to be negligibly small compared with that of the enhancement-mode transistor and the main bulk resistance.Keywords
This publication has 5 references indexed in Scilit:
- Modeling of the on-resistance of LDMOS, VDMOS, and VMOS power transistorsIEEE Transactions on Electron Devices, 1980
- A monolithic 200-V CMOS analog switchIEEE Journal of Solid-State Circuits, 1976
- A computer-aided design model for high-voltage double diffused MOS (DMOS) transistorsIEEE Journal of Solid-State Circuits, 1976
- Avalanche breakdown in high-voltage D-MOS devicesIEEE Transactions on Electron Devices, 1976
- Hot Electron Effects and Saturation Velocities in Silicon Inversion LayersJournal of Applied Physics, 1970