New concept for high-throughput multielectron beam direct write system
- 1 November 2000
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 18 (6) , 3061-3066
- https://doi.org/10.1116/1.1320798
Abstract
A new multielectron-beam optical system with correction lens array (CLA) is proposed. The CLA is arranged between an electron source and reduction optics. The CLA can generate plural intermediate images of the electron source as a multisource, and moreover can compensate field curvature and distortion of the reduction optics. The proposed system was designed and optimized through simulations. The specifications are field size of 250 μm square, convergence beam angle of 10 mrad, 64×64 beams, individual beam size of φ25 nm, accelerating voltage of 50 kV, and demagnification ratio of 50. The practical resolution for various resist processes is estimated considering the Coulomb interaction effect, and the throughput is simulated. The proposed system offers the possibility of “maskless” electron beam lithography with throughput in excess of 50 wafers/h (8 in.) for the International Technology Roadmap for Semiconductors (ITRS) 100 nm and 70 nm nodes at 3 μC/cm2 resist sensitivity.Keywords
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