New approach to resolution limit and advanced image formation techniques in optical lithography
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (1) , 67-75
- https://doi.org/10.1109/16.65738
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- 3-dimensional stacked capacitor cell for 16 M and 64 M DRAMSPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Synthesis of New Metal-Free Diazonium Salts and Their Applications to MicrolithographyPublished by American Chemical Society (ACS) ,1989
- New I-Line LensesPublished by SPIE-Intl Soc Optical Eng ,1989
- New g-Line Lens For Next GenerationPublished by SPIE-Intl Soc Optical Eng ,1989
- Improvement of defocus tolerance in a half-micron optical lithography by the focus latitude enhancement exposure method: Simulation and experimentJournal of Vacuum Science & Technology B, 1989
- A new method for enhancing focus latitude in optical lithography: FLEXIEEE Electron Device Letters, 1987
- A three-dimensional photoresist image simulator: TRIPS-IIEEE Electron Device Letters, 1985
- Contrast enhanced photoresists—processing and modelingPolymer Engineering & Science, 1983
- High resolution, steep profile resist patternsJournal of Vacuum Science and Technology, 1979
- A general simulator for VLSI lithography and etching processes: Part I—Application to projection lithographyIEEE Transactions on Electron Devices, 1979