Influence of substrate temperature in laser annealing of arsenic-implanted silicon
- 1 February 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (2) , 1100-1101
- https://doi.org/10.1063/1.328811
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Characterization of 31P+-implanted Si layers by ellipsometryJournal of Applied Physics, 1979
- Dual-wavelength laser annealingApplied Physics Letters, 1979
- Temperature dependence of the optical properties of siliconJournal of Applied Physics, 1979
- Influence of the absorption coefficient in Nd laser annealing of amorphized semiconductor layersApplied Physics Letters, 1979
- Characterization of laser-annealed Si layers by ellipsometryRadiation Effects, 1979
- ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICONApplied Physics Letters, 1970