Photoluminescence investigation of residual shallow acceptors in AlxGa1−xAs grown by metalorganic vapor phase epitaxy

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Abstract
Low‐temperature photoluminescence on metalorganic vapor phase epitaxial AlxGa1−xAs layers (0⩽x⩽0.37) exhibiting relatively sharp bound exciton and band acceptor lines, combined with effective mass‐type calculations of the expected transition energies, has allowed the identification of carbon, zinc, and possibly silicon as residual acceptors. Carbon seems to be the predominant residual acceptor impurity species in layers grown at high temperature. Large spectral shifts in direct‐band‐gap AlxGa1−xAs as a function of excitation density or in time resolved spectroscopy reported in literature are attributed to the presence of several acceptor species rather than to D‐A pair recombination.