Continuous room-temperature operation of Ga(1−x)AlxAs-GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition
- 1 April 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (7) , 406-407
- https://doi.org/10.1063/1.90085
Abstract
Ga(1−x)AlxAs‐GaAs double‐heterostructure mesa‐stripe‐geometry lasers that operate continuously at room temperature (23 °C) have been grown by metalorganic chemical vapor deposition (MO‐CVD). Threshold currents as low as 119 mA dc have been measured for devices with a mesa width of 14 μm and a cavity length of 380 μm.Keywords
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