Growth of dislocations during laser melting and solidification
- 15 August 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (4) , 330-332
- https://doi.org/10.1063/1.91110
Abstract
Silicon crystals containing dislocations which terminated in the free surface were melted to depths of about 0.5 μm by rube‐laser pulses, and the growth characteristics of dislocations of various types were studied by transmission electron microscopy. It was found that both edge‐ and screw‐type dislocations grew in 〈113〉 directions that were not normal to the crystal‐growth interface.Keywords
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