Laser annealing of diffusion-induced imperfections in silicon
- 1 July 1978
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (1) , 14-16
- https://doi.org/10.1063/1.90164
Abstract
High-temperature diffusion of boron or phosphorus into silicon leads to the formation of spherical precipitates and/or dislocation loops in the diffused layer which influence electrical junction characteristics. These diffusion-induced imperfections can be removed by high-energy pulse laser treatment. The boron or phosphorus atoms previously contained in the precipitates become electrically active and the resulting dopant concentration can exceed the solid solubility limit.Keywords
This publication has 4 references indexed in Scilit:
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- Control of diffusion induced dislocations in phosphorus diffused siliconSolid-State Electronics, 1966
- Diffusion-Induced Imperfections in SiliconJournal of the Electrochemical Society, 1965
- Silicon Phosphide Precipitates in Diffused SiliconJournal of the Electrochemical Society, 1964