Concentration-dependent diffusion of B and P in Si
- 1 May 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (5) , 2437-2439
- https://doi.org/10.1063/1.1662589
Abstract
At high impurity concentrations, the boron and phosphorus diffusion coefficient is concentration dependent. In the present work Thai's results are modified, extended, and discussed in detail. The total diffusion enhancement factor is calculated assuming proper semiconductor degeneracy for the case of B and P diffusion in Si, for the concentration range 1017−1022 atoms cm−3 and for various diffusion temperatures. Theoretical results are compared with the available experimental results.This publication has 11 references indexed in Scilit:
- Discussion on anomalous diffusion in siliconSolid-State Electronics, 1973
- The lattice contraction coefficient of boron and phosphorus in siliconSolid-State Electronics, 1972
- Concentration-Dependent Diffusion of Boron and Phosphorus in SiliconJournal of Applied Physics, 1970
- Anomalous diffusion in semiconductorsȁa quantitative analysisSolid-State Electronics, 1970
- Solid Solubility and Diffusion Coefficients of Boron in SiliconJournal of the Electrochemical Society, 1969
- The effect of the internal electric field on ionized impurity diffusion in semiconductorsBritish Journal of Applied Physics, 1966
- Diffusion-Induced Imperfections in SiliconJournal of the Electrochemical Society, 1965
- Silicon Phosphide Precipitates in Diffused SiliconJournal of the Electrochemical Society, 1964
- Field-Enhanced Donor Diffusion in Degenerate Semiconductor LayersJournal of Applied Physics, 1961
- Detailed analysis of thin phosphorus-diffused layers in p-type siliconSolid-State Electronics, 1961