Characteristics of GaAsSb single-quantum-well-lasers emitting near 1.3 μm

1 July 2000

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters

Vol. 12 (7) , 771-773
https://doi.org/10.1109/68.853495

Abstract

We report data on GaAsSb single-quantum-well lasers grown on GaAs substrates. Room temperature pulsed emission at 1.275 /spl mu/m in a 1250-/spl mu/m-long device has been observed. Minimum threshold current densities of 535 A/cm/sup 2/ were measured in 2000-/spl mu/m-long lasers. We also measured internal losses of 2-5 cm/sup -1/, internal quantum efficiencies of 30%-38% and characteristic temperatures T/sub 0/ of 67/spl deg/C-77/spl deg/C. From these parameters, a gain constant G/sub 0/ of 1660 cm/sup -1/ and a transparency current density J/sub tr/ of 134 A/cm/sup 2/ were calculated. The results indicate the potential for fabricating 1.3-/spl mu/m vertical-cavity surface-emitting lasers from these materials.

Keywords

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