Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 27 (6) , 1377-1385
- https://doi.org/10.1109/3.89954
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Anomalous temporal response of gain guided surface emitting lasersElectronics Letters, 1991
- Rastered, uniformly separated wavelengths emitted from a two-dimensional vertical-cavity surface-emitting laser arrayApplied Physics Letters, 1991
- Drastic reduction of series resistance in doped semiconductor distributed Bragg reflectors for surface-emitting lasersApplied Physics Letters, 1990
- Low series resistance vertical-cavity front-surface-emitting laser diodeApplied Physics Letters, 1990
- Surface-emitting microlasers for photonic switching and interchip connectionsOptical Engineering, 1990
- Lasing threshold in quantum well surface-emitting lasers: Many-body effects and temperature dependenceApplied Physics Letters, 1989
- Room-temperature continuous-wave vertical-cavity surface-emitting GaAs injection lasersApplied Physics Letters, 1989
- Design of Fabry-Perot surface-emitting lasers with a periodic gain structureIEEE Journal of Quantum Electronics, 1989
- Gain and carrier lifetime measurements in AlGaAs single quantum well lasersIEEE Journal of Quantum Electronics, 1983
- A graded-index waveguide separate-confinement laser with very low threshold and a narrow Gaussian beamApplied Physics Letters, 1981