On the effects of Auger recombination and energetic carrier leakage in GaInAsP/InP light emitting diodes

Publisher Website
Google Scholar
Abstract
A model that unifies energetic carrier leakage with the Auger recombination theory has been applied to different designs of light emitting diodes (LEDs) to reconcile the discrepancies between results experimentally measured and theoretically predicted from Auger recombination theory alone. It is found that by applying this unified theory, theoretically calculated results are in excellent agreement with experimental measurements for a variety of LED designs in a wide range of injection currents.