Photoelectric probing of inhomogeneity in undoped, semi-insulating GaAs crystals

1 November 1983

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 43 (9) , 841-843
https://doi.org/10.1063/1.94521

Abstract

Photocurrent distribution profiles in undoped, semi-insulating GaAs crystals have been investigated under 1.06-μm laser light irradiation. Results were compared with distributions of leakage current, etch pit density, and optical absorption at the same wavelength. It has been shown that inhomogeneities in undoped GaAs crystals have been observed by this method, which are closely related with etch pit density distribution.

Keywords

This publication has 10 references indexed in Scilit:

Direct observation of the principal deep level (EL2) in undoped semi-insulating GaAs
Applied Physics Letters, 1983
Correlation between Dislocation Distribution and FET Performances Observed in Low Cr Doped LEC GaAs
Japanese Journal of Applied Physics, 1983
Role of Dislocations in Semi-Insulation Mechanism in Undoped LEC GaAs Crystal
Japanese Journal of Applied Physics, 1982
Inhomogeneity in Semi-Insulating GaAs Revealed by Scanning Leakage Current Measurements
Japanese Journal of Applied Physics, 1982
Compensation mechanism in liquid encapsulated Czochralski GaAs: Importance of melt stoichiometry
IEEE Transactions on Electron Devices, 1982
Characterization of Nonuniformity in Semi-Insulating LEC GaAs by Photoluminescence Spectroscopy
Japanese Journal of Applied Physics, 1982
Optical assessment of the main electron trap in bulk semi-insulating GaAs
Applied Physics Letters, 1981
A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs Crystals
Bell System Technical Journal, 1980
Photoconductivity analysis of chromium and oxygen-related levels in semi-insulating GaAs
Journal of Electronic Materials, 1979
Current-voltage characteristics and deep levels in chromium-doped semi-insulating GaAs
Applied Physics Letters, 1978