Inhomogeneity in Semi-Insulating GaAs Revealed by Scanning Leakage Current Measurements

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Abstract
Inhomogeneity in semi-insulating (SI)-GaAs has been examined by scanning leakage current (I L) measurements. The observed leakage current exhibits broad intensity variation accompanying short period sharp fluctuation along both radial and pulling directions. The undoped SI-GaAs generally shows marked inhomogeneity of the leakage current compared with the Cr-doped GaAs. The broad I L intensity variation along the radial direction is correlated with dislocation distribution. Thermal annealing at 850°C for 1 hour in H2 significantly smooths out the inhomogeneity.