Low-temperature gettering of Cr in GaAs
- 1 July 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (1) , 53-55
- https://doi.org/10.1063/1.91845
Abstract
Gettering of Cr by back-surface damage has been investigated at temperatures in the range 300–400 °C, for anneal periods of 10–300 h. It has been shown that measurable concentrations of Cr can be detected and that the process can be characterized by an activation energy of ≃0.88 eV and a time-dependent term exp(ϑt1/2).Keywords
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