Correlation between Dislocation Distribution and FET Performances Observed in Low Cr Doped LEC GaAs
- 1 January 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (1A) , L54-56
- https://doi.org/10.1143/jjap.22.l54
Abstract
Definitive correlation between dislocation distribution and distribution of FET performances in low Cr (0.155∼0.180 wt ppm) doped LEC GaAs was obtained by simultaneous characterization of (100) and (010) wafers. Drain-source currents (I ds) in the high EPD area were higher than those in the low EPD area. Micro-scale correlation between lineage-like dislocations and I ds distribution was also clearly observed. Implications of these results on the size of a dislocation-influenced area are discussed.Keywords
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