Study of sub-bandgap photo-induced absorption in a-Si:H using excitation spectroscopy in a waveguide configuration

This publication has 7 references indexed in Scilit:

• Interfacial neutral- and charged-dangling-bond densities between hydrogenated amorphous silicon and hydrogenated amorphous silicon nitride in top nitride and bottom nitride structures
  Applied Physics Letters, 1995
• Enhanced electro-optic effect in amorphous hydrogenated silicon based waveguides
  Applied Physics Letters, 1992
• Threshold and saturation effects for photosignals in an amorphous silicon waveguide structure
  Applied Physics Letters, 1991
• Transient photocapacitance and capacitance studies of interface and bulk states in metal / a-SiN1.6:H / a-Si:H / c-Si devices
  Journal of Non-Crystalline Solids, 1991
• Electron equilibration in a-Si:H bandtails following pulse excitation
  Solid State Communications, 1988
• Electroabsorption measurements of interfaces in a-Si:H/a-${\mathrm{SiO}}_{\mathrm{x}}$:H and a-Si:H/a-${\mathrm{SiN}}_{\mathrm{x}}$:H multilayer films
  Physical Review B, 1986
• Light-induced defects in hydrogenated amorphous silicon observed by picosecond photoinduced absorption
  Applied Physics Letters, 1985