Light-induced defects in hydrogenated amorphous silicon observed by picosecond photoinduced absorption
- 15 September 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (6) , 589-591
- https://doi.org/10.1063/1.96081
Abstract
Phosphorus-doped and boron-doped hydrogenated amorphous silicon were studied by photoinduced absorption (PA) in the time range from 2 to 1800 ps. Prolonged light exposure (ℏω=2.0 eV) causes PA to decay more rapidly. The data are fit to a multiple trapping model. Minority carriers get trapped at deep defect states whose density increases with light exposure. These results are consistent with the interpretation that the light-induced defects in amorphous silicon are dangling bonds.Keywords
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