Growth and characterization of Si doped vapor phase epitaxial GaAs for mesfet
- 1 July 1982
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 11 (4) , 663-688
- https://doi.org/10.1007/bf02672390
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- On the role of silicon during growth of vpe GaAs-layersJournal of Electronic Materials, 1976
- Electrical characterization of epitaxial layersThin Solid Films, 1976
- Effects of the Growth Temperature and Substrate Orientation on the Incorporation of Si, Ge and Sn into Vapour Epitaxial GaAsJapanese Journal of Applied Physics, 1974
- Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layersJournal of Crystal Growth, 1972
- Thermodynamics of Ga-AsCl3-H2 system and dopant incorporationJournal of Crystal Growth, 1971
- Reaction Equilibria in the Growth of GaAs and GaP by the Chloride Transport ProcessJournal of the Electrochemical Society, 1970
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965
- The preparation of high purity gallium arsenide by vapour phase epitaxial growthSolid-State Electronics, 1965