Temperature dependence of anomalous structure in the derivative absorption spectra of Si:P

This publication has 9 references indexed in Scilit:

• Observation of free-exciton two-electron transitions in wavelength-derivative absorption spectra of impurity-doped silicon
  Physical Review B, 1975
• Fine structures of indirect exciton absorption in phosphorus-doped silicon
  Solid State Communications, 1975
• Temperature dependence of the band gap of silicon
  Journal of Applied Physics, 1974
• New photoluminescence line-series spectra attributed to decay of multiexciton complexes bound to Li, B, and P centers in Si
  Physical Review B, 1974
• Evidence for Bound Multiple-Exciton Complexes in Silicon
  Physical Review Letters, 1973
• Analysis of derivative spectrum of indirect exciton absorption in silicon
  Solid State Communications, 1973
• Valley-Orbit Splitting of Free Excitons? The Absorption Edge of Si
  Physical Review Letters, 1970
• New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and Germanium
  Physical Review B, 1967
• Experimental Proof of the Existence of a New Electronic Complex in Silicon
  Physical Review Letters, 1960