Intrinsic defects in neutron-irradiated silicon an infrared study
- 1 January 1978
- journal article
- Published by EDP Sciences in Journal de Physique Lettres
- Vol. 39 (8) , 113-117
- https://doi.org/10.1051/jphyslet:01978003908011300
Abstract
We show that the low temperature observation of the near IR absorption bands at 3.3-3.6 μm in irradiated silicon can be monitored by illumination of the sample by infrared radiation of selected energies. This behaviour is ascribed to the capture of a photoelectron or to its photo-release by the defect involved, and we discuss its IR active charge state. We also report the observation of new IR absorption lines prior to annealing, due to intrinsic defects whose nature is briefly discussed in relation to the annealing resultsKeywords
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