Formation of High Quality Si1−xGex/Si Heterostructures by Selective-Area Mbe Growth
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Selective-area MBE growth of Si1−xGex film is examined using a Si substrate partially covered with SiO2 film. Elimination of misfit dislocations is observed by TEM. Two possible mechanisms in this elimination, limitation of the lateral extension of misfit dislocations, and partial relaxation of the strain at the SiO2 pattern edge, are discussed.Keywords
This publication has 4 references indexed in Scilit:
- Reduction in misfit dislocation density by the selective growth of Si1−xGex/Si in small areasApplied Physics Letters, 1990
- Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth areaJournal of Applied Physics, 1989
- Determination of the critical layer thickness of Si1−xGex/Si heterostructures by direct observation of misfit dislocationsApplied Physics Letters, 1988
- GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1984