Encapsulated GaAs power MESFET

This publication has 5 references indexed in Scilit:

• High-power-density GaAs MISFETs with a low-temperature-grown epitaxial layer as the insulator
  IEEE Electron Device Letters, 1991
• Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE
  IEEE Electron Device Letters, 1990
• The role of the device surface in the high voltage behaviour of the GaAs MESFET
  Solid-State Electronics, 1986
• Power-limiting breakdown effects in GaAs MESFET's
  IEEE Transactions on Electron Devices, 1981
• Influence of the surface and the episubstrate interface on the drain current drift of GaAs MESFET's
  IEEE Transactions on Electron Devices, 1981