GaAs Schottky diodes incorporating Langmuir-Blodgett layers of pre-formed polymers
- 14 December 1985
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 18 (12) , 2483-2487
- https://doi.org/10.1088/0022-3727/18/12/016
Abstract
Studies of GaAs photodiodes are described in which insulating layers formed from amphiphilic polymers deposited by the Langmuir-Blodgett technique are incorporated. It is shown that it is possible, by using this technique, to increase the diode efficiency by a substantial amount and to form devices that are stable at temperatures in excess of 200 degrees C and that have considerable mechanical stability.Keywords
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