Dynamic self-organization of strained islands during SiGe epitaxial growth
- 17 August 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (7) , 951-953
- https://doi.org/10.1063/1.122049
Abstract
Dynamic self-organization of coherently strained islands during SiGe molecular beam epitaxy on Si(001) is measured in real time using a novel spectroscopic light scattering technique. We show that an array of hut clusters self-orders on a square mesh with increasing areal coverage. Ordering occurs to minimize the repulsive elastic interactions between neighboring islands. Self-organization breaks down when islands coalesce during deposition or during static coarsening.Keywords
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