Growth of yttria-stabilized cubic zirconia films on GaAs (100) by pulsed laser evaporation
- 31 July 1987
- journal article
- Published by Elsevier in Materials Letters
- Vol. 5 (7-8) , 250-254
- https://doi.org/10.1016/0167-577x(87)90104-2
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Epitaxial growth of (100)CdTe on (100)GaAs induced by pulsed laser evaporationApplied Physics Letters, 1985
- Plasma enhanced beam deposition of thin dielectric filmsApplied Physics Letters, 1983
- Calcia-stabilized zirconia thin films in GaAs metal/insulator/semiconductor technology: Reduction of GaAs native oxideThin Solid Films, 1983
- Growth of HgCdTe films by laser induced evaporation and depositionJournal of Vacuum Science and Technology, 1982
- Pulsed laser evaporated SnO2 filmsJournal of Crystal Growth, 1982
- Growth and characterization of doped ZrO2 and CeO2 films deposited by bias sputteringJournal of Vacuum Science and Technology, 1977
- Morphological and electrical properties of rf sputtered Y2O3-doped ZrO2 thin filmsJournal of Vacuum Science and Technology, 1976
- Vacuum Deposition by High-Energy Laser with Emphasis on Barium Titanate FilmsJournal of Vacuum Science and Technology, 1969
- Formation of Crystalline Films by Laser EvaporationJournal of the Electrochemical Society, 1968
- Vacuum Deposited Thin Films Using a Ruby LaserApplied Optics, 1965